Researchers have succeeded in visualizing changes in defect density on the surface of GaN through the laser terahertz emission microscope (LTEM) which measures THz waves generated by laser emission. The discovery shows that LTEM is useful as a new method for evaluating the quality of wide-gap semiconductors and it is also expected that LTEM will bring a breakthrough in the development of next-generation optical devices, super high frequency devices, and energy devices.
SOURCE: Solar Energy News — ScienceDaily – Read entire story here.
Breakthrough to the development of energy-saving devices for the next generation
